InGaAs PDInGaAs Photodiode
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As grown p/i/n epi structure InGaAs P-I-N photodetector (PD) offered in die/array form for up to 25Gb/s telecommunication applications.
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AR coating optimized for 1550/1310nm applications.
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Excellent low dark current and capacitance.
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30µm optical detection mesa area.
